SSG4902NA 6.4 a, 60 v, r ds(on) 41 m ? dual n-channel mode power mosfet elektronische bauelemente 15-mar-2012 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a h b m d c j k f l e n g rohs compliant product a suffix of -c specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell density process to provide low r ds(on) and to ensure minimal power loss and heat dissipati on. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards,cellular and cordless telephones. features low r ds(on) provides higher efficiency and extends battery life. low thermal impedance copper leadframe sop-8 saves board space. fast switching speed. high performance trench technology. package information package mpq leader size sop-8 2.5k 13 inch maximum ratings (t a =25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v continuous drain current 1 t a = 25c i d 6.4 a t a = 70c 5.2 a pulsed drain current 2 i dm 40 a continuous source current (diode conduction) 1 i s 2 a total power dissipation 1 t a = 25c p d 2.1 w t a = 70c 1.3 w operating junction & storage temperature range t j , t stg -55 ~ 150 c thermal resistance ratings thermal resistance junction-ambient (max.) 1 t Q 10 sec r ja 62.5 c / w steady state 110 c / w note: 1 surface mounted on 1 x 1 fr4 board. 2 pulse width limited by maximum junction temperat ure. sop-8 ref. millimeter ref. millimeter min. max. min. max. a 5.80 6. 20 h 0 . 35 0 .4 9 b 4 . 80 5.0 0 j 0. 375 ref. c 3 .80 4 . 0 0 k 45 d 0 8 l 1.35 1. 75 e 0.40 0.90 m 0.10 0 . 25 f 0. 19 0. 25 n 0.25 ref. g 1.27 typ. d d s s g g d d
SSG4902NA 6.4 a, 60 v, r ds(on) 41 m ? dual n-channel mode power mosfet elektronische bauelemente 15-mar-2012 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static gate threshold voltage v gs(th) 1 - - v v ds =v gs , i d =250 a gate-body leakage current i gss - - 100 na v ds =0, v gs =20v zero gate voltage drain current i dss - - 1 a v ds =60v, v gs =0 - - 10 a v ds =60v, v gs =0, t j = 55c on-state drain current 1 i d(on) 20 - - a v ds =5v, v gs =10v drain-source on-resistance 1 r ds(on) - - 41 m v gs =10v, i d =6.4a - - 52 v gs =4.5v, i d =5.6a forward transconductance 1 g fs - 11 - s v ds =15v, i d =6.4a diode forward voltage v sd - - 1.2 v i s =2a, v gs =0 dynamic 2 total gate charge q g - 12.5 - nc i d =6.4a v ds =30v v gs =4.5v gate-source charge q gs - 2.4 - gate-drain charge q gd - 2.6 - switching turn-on delay time t d(on) - 11 - ns v dd =30v i d =1a v gen =10v r l =30 rise time t r - 8 - turn-off delay time t d(off) - 19 - fall time t f - 6 - notes: 1 pulse test pw 300 s duty cycle 2% Q Q . 2 guaranteed by design, not subject to production testing.
SSG4902NA 6.4 a, 60 v, r ds(on) 41 m ? dual n-channel mode power mosfet elektronische bauelemente 15-mar-2012 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
SSG4902NA 6.4 a, 60 v, r ds(on) 41 m ? dual n-channel mode power mosfet elektronische bauelemente 15-mar-2012 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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